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Proceedings Paper

Au- and Cu-doped HgCdTe HDVIP detectors
Author(s): Arvind I. D'Souza; Maryn G. Stapelbroek; Elizabeth R. Bryan; J. D. Beck; M. A. Kinch; James E. Robinson
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Paper Abstract

Detector characteristics of Au- and Cu-doped High Density Vertically Integrated Photodiode (HDVIP) detectors are presented in this paper. Individual photodiodes in test bars were examined by measuring I-V curves under dark and illuminated conditions at high bias values. Noise as a function of frequency has been measured on Au- and Cu-doped MWIR [λc(78 K) = 5 μ] HDVIP HgCdTe diodes at several temperatures under dark and illuminated conditions. No excess currents are observed above the photocurrents for reverse bias values out to 500 mV. Both Au- and Cu-doped detectors measured at 85 K, exhibit gain values between 40 and 50 at 8 V reverse bias. Gain values fell in this same range even when the flux incident on each type of detector was varied. The excess noise factor for the Cu-doped detectors ranged from 1.35 to 1.69 depending on the incident flux. Variation is probably due to measurement error. The noise at 8 V reverse bias is white for the Cu-doped detectors. The Au-doped detectors exhibited 1/f noise at 8 V reverse bias. At higher frequencies where the noise spectrum was quasi-white, the excess noise factor for the Au-doped detector was in the 1.0 to 1.5 range.

Paper Details

Date Published: 30 August 2004
PDF: 9 pages
Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.547189
Show Author Affiliations
Arvind I. D'Souza, DRS Sensors & Targeting Systems, Inc. (United States)
Maryn G. Stapelbroek, DRS Sensors & Targeting Systems, Inc. (United States)
Elizabeth R. Bryan, DRS Sensors & Targeting Systems, Inc. (United States)
J. D. Beck, DRS Infrared Technologies, LP (United States)
M. A. Kinch, DRS Infrared Technologies, LP (United States)
James E. Robinson, DRS Infrared Technologies, LP (United States)


Published in SPIE Proceedings Vol. 5406:
Infrared Technology and Applications XXX
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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