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Proceedings Paper

Novel LEDs using unique lateral p-n junctions on GaAs (311)A patterned substrates
Author(s): Nethaji Dharmarasu; Pablo Oscar Vaccaro; Shanmugam Saravanan; Jose Maria Zanardi Ocampo; Kazuyoshi Kubota; Nobuo Saito
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Paper Abstract

We report the high-density light-emitting diodes (LEDs) using lateral junction for LED printer and other applications. Semi-insulating GaAs (311)A substrates were patterned to create (100) sidewall. GaAs/AlxGa1-xAs epilayers were grown on the patterned substrate using the amphoteric silicon as a dopant, which forms the lateral p-n junction. For the first time, high-density (2400 dots per inch) LED arrays were fabricated using the lateral junction with device width of 10.6 micron. Light emission spectrum shows a single peak at a wavelength of 813 nm with FWHM of 56 nm at room temperature. The same method can be used to fabricate LED arrays with higher device densities for applications in high resolution LED printers, displays and other applications.

Paper Details

Date Published: 21 June 2004
PDF: 7 pages
Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); doi: 10.1117/12.547116
Show Author Affiliations
Nethaji Dharmarasu, ATR Adaptive Communications Research Labs. (Japan)
Pablo Oscar Vaccaro, ATR Adaptive Communications Research Labs. (Japan)
Shanmugam Saravanan, ATR Adaptive Communications Research Labs. (Japan)
Jose Maria Zanardi Ocampo, ATR Adaptive Communications Research Labs. (Japan)
Kazuyoshi Kubota, ATR Adaptive Communications Research Labs. (Japan)
Nobuo Saito, ATR Adaptive Communications Research Labs. (Japan)


Published in SPIE Proceedings Vol. 5366:
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
Steve A. Stockman; H. Walter Yao; E. Fred Schubert, Editor(s)

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