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Proceedings Paper

Small and large signal trap-assisted GR noise modeling in semiconductor devices
Author(s): Simona Donati Guerrieri; Gabriele Conte; Fabrizio Bonani; Giovanni Ghione
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Paper Abstract

This contribution is aimed at describing the available techniques for simulating trap-assisted generation recombination noise in electron devices. We consider physics-based models, where carrier transport equations are complemented by a set of rate equations, one for each trap energy level included in the model, expressing charge conservation. To the aim of noise analysis, such rate equations include stochastic Langevin sources representing level occupancy fluctuations, whose statistical properties are known from basic physical analysis. A generalization of the standard Green's function technique to the physics-based noise analysis can be then exploited to propagate the internal fluctuations to the device terminals, in order to evaluate the correlation matrix of the external noise generators. With reference to a simple device, a superposition of noninteracting trap levels with a proper distribution of timeconstants is shown to yield a 1/f spectrum on a prescribed frequency range. In large-signal operation the fundamental white noise fluctuations are amplitude modulated by the periodic device working point and converted into cyclostationary fluctuations. The cyclostationary internal noise is then propagated to the device terminals by means of proper Green's functions that also involve noise frequency conversion. The same device discussed in small-signal operation is simulated in cyclostationary conditions, therefore demonstrating the upconversion of 1/f noise from baseband to the steady-state harmonics.

Paper Details

Date Published: 25 May 2004
PDF: 12 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547063
Show Author Affiliations
Simona Donati Guerrieri, Politecnico di Torino (Italy)
Gabriele Conte, Politecnico di Torino (Italy)
Fabrizio Bonani, Politecnico di Torino (Italy)
Giovanni Ghione, Politecnico di Torino (Italy)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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