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Proceedings Paper

Analysis of low frequency noise in GaN based HEMT technologies
Author(s): Nathalie Malbert; Nathalie Labat; Arnaud Curutchet; André Touboul
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Paper Abstract

In this paper, we present some results on low frequency noise of GaN HEMTs grown either on sapphire, SiC or Si. The evolution of LF drain and gate current noise is analysed in ohmic and saturation regime. Devices on sapphire grown either by MOCVD or by MBE present αH value in ohmic regime as low as 10-4, whereas for devices grown by MOCVD on SiC, αH extends from 5x10-4 to 10-2. Low frequency gate current noise and coherence function have been measured to discuss possible correlation between drain and gate current noise. Devices with high reverse gate current exhibit high gate current noise. The coherence function increases when the Ig/Id ratio becomes higher than 10-5 which results in increase of the drain current noise due to contribution of gate current fluctuations.

Paper Details

Date Published: 25 May 2004
PDF: 14 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547061
Show Author Affiliations
Nathalie Malbert, Univ. Bordeaux 1 (France)
Nathalie Labat, Univ. Bordeaux 1 (France)
Arnaud Curutchet, Univ. Bordeaux 1 (France)
André Touboul, Univ. Bordeaux 1 (France)

Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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