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Proceedings Paper

Base low-frequency noise analysis of InP/InGaAs/InP DHBT submitted to bias and thermal stresses
Author(s): Cristell Maneux; Jean-Christophe Martin; Nathalie Labat; André Touboul
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Paper Abstract

This paper presents results of ageing tests performed on InP/InGaAs DHBT on InP substrate. An extrinsic current path between measurement pads is shown to be responsible for leakage current evolution. The analysis of low frequency base current noise is used to identify pre-eminent noise sources and evaluate the stability of intrinsic HBT.

Paper Details

Date Published: 25 May 2004
PDF: 8 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547056
Show Author Affiliations
Cristell Maneux, Univ. Bordeaux 1 (France)
Jean-Christophe Martin, Univ. Bordeaux 1 (France)
Nathalie Labat, Univ. Bordeaux 1 (France)
André Touboul, Univ. Bordeaux 1 (France)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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