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Proceedings Paper

Low frequency noise behavior in GaN HEMT’s on silicon substrate
Author(s): Laurent Bary; Elena Angeli; Abdelali Rennane; Jean-Guy Tartarin; Jacques Graffeuil; Robert Plana; Sylvain Delage; Jean-Claude de Jaegger; Yvon Cordier
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Paper Abstract

In this paper, we report low frequency noise (LFN) data obtained on passivated AlGaN/GaN HEMT’s grown by MBE on a silicon substrate. In order to localize the LFN sources, we have measured all the extrinsic gate and drain current noise generators and their coherence versus bias in the linear regime. We have found that the gate noise sources result from leakage phenomena at gate-source and gate-drain regions. Drain noise sources are mostly located in the active channel below the gate and they feature an equivalent Hooge coefficient of about 10-3. Secondly, in order to build a LFN model that fits the requirements of a CAD simulator, we have measured the LFN sources for numerous bias points in the saturation region and therefore we have studied the bias dependence of the different noise sources under normal operating conditions. Results show that the gate terminal noise current impacts heavily the overall LFN of the transistor contrary to others III-V HEMTs, and that specific bias conditions are needed in order to reduce the LFN.

Paper Details

Date Published: 25 May 2004
PDF: 10 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547046
Show Author Affiliations
Laurent Bary, LAAS-CNRS (France)
Elena Angeli, LAAS-CNRS (France)
Abdelali Rennane, LAAS-CNRS (France)
Jean-Guy Tartarin, LAAS-CNRS (France)
Jacques Graffeuil, LAAS-CNRS (France)
Robert Plana, LAAS-CNRS (France)
Sylvain Delage, THALES (France)
Jean-Claude de Jaegger, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Yvon Cordier, Ctr. de Recherche sur L'Heteroepitaxie et ses Applications (France)

Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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