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Proceedings Paper

Experimental and theoretical analysis of 1/f noise in polysilicon thin film transistors
Author(s): Abdelmalek Boukhenoufa; Laurent Pichon; Christophe Cordier; Hicham El Din Kotb; Tayeb Mohamed-Brahim
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Paper Abstract

A study of low frequency noise is made in Solid Phase Crystallised (SPC) polysilicon Thin Film Transistors (TFTs) issued from low temperature process (≤600° C). The study is performed in both below and above threshold regions. At first, a static electrical caracterisation of the transistors is carried out. Analysis of the low frequency noise in the TFTs shows that it can be related both to the Meyer-Neldel MN effect, and to the flatband voltage fluctuations due to the trapping/detrapping processes of carriers at the SiO2/Poly-Si interface. Furthermore, a new method of the channel carrier number calculation is proposed. Then, the apparent noise parameter αapp, based on the Hooge formula, is deduced. At low gate voltages αapp increases and reaches a maximum value close to the threshold voltage. This αapp singular behavior is then discussed.

Paper Details

Date Published: 25 May 2004
PDF: 6 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547031
Show Author Affiliations
Abdelmalek Boukhenoufa, Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen (France)
Laurent Pichon, Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen (France)
Christophe Cordier, Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen (France)
Hicham El Din Kotb, Institut d'Electronique et de Télécommunications de Rennes (France)
Tayeb Mohamed-Brahim, Institut d'Electronique et de Télécommunications de Rennes (France)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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