Share Email Print
cover

Proceedings Paper

Using low frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction
Author(s): Jean-Guy Tartarin; Abdelali Rennane; Elena Angeli; Laurent Bary; Jean-Claude De Jaeger; Sylvain Delage; Robert Plana; Jacques Graffeuil
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

AlGaN/GaN HEMTs are promising devices not only for high frequency power amplification but also for non-linear applications such as VCO. Therefore an assessment of their low frequency noise (LFN) is needed since it can be up-converted around the RF carrier. We have therefore compared different devices either made on sapphire or silicon in order to know which ones feature the lowest LFN. This study involves static and low frequency noise measurements (two different LFN set-up will be used and compared). GaN HEMT devices featuring several gate dimensions have been measured for different biasing conditions both in ohmic and saturation regime. We have compared sapphire based devices with silicon based ones with respect to their LFN levels. In a second part of this work, we report on some reliability results of HEMT on sapphire substrates: identification of defects has been achieved with the help of static measurements, and we make use of low frequency noise as well as physical simulation in order to understand the operating mode of the device. For the first time, we correlate the γ of the 1/fγ LFN spectrum with transport mechanisms of the carriers: we found that γ strongly depends on the carriers conduction path. This hypothesis has been checked for HEMT on silicon substrate.

Paper Details

Date Published: 25 May 2004
PDF: 11 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547022
Show Author Affiliations
Jean-Guy Tartarin, LAAS-CNRS (France)
Paul Sabatier Univ. (France)
Abdelali Rennane, LAAS-CNRS (France)
Elena Angeli, LAAS-CNRS (France)
Laurent Bary, LAAS-CNRS (France)
Jean-Claude De Jaeger, Institut d'Electronique et de Microélectronique du Nord (France)
Sylvain Delage, THALES (France)
Robert Plana, LAAS-CNRS (France)
Paul Sabatier University, Toulouse (France)
Jacques Graffeuil, LAAS-CNRS (France)
Paul Sabatier Univ. (France)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

© SPIE. Terms of Use
Back to Top