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Proceedings Paper

Investigation of the rf-noise behavior of InP-based DHBT with InGaAs base and GaAsSb base
Author(s): Silja Ehrich; Stefan Neumann; Wolfgang Brockerhoff; Franz-Josef Tegude
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Paper Abstract

The influence of base layer structure of InGaAs/InP and GaAsSb/InP double heterojunction bipolar transistors in terms of rf-performance and rf-noise behaviour was investigated in detail. With the use of a combined small-signal and rf-noise model it is possible to localize the noise-phenomena to specific device regions. With this knowledge, the transistor can be optimised in terms of the layer-structure achieve improved rf-performance.

Paper Details

Date Published: 25 May 2004
PDF: 9 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546981
Show Author Affiliations
Silja Ehrich, Univ. Duisburg-Essen (Germany)
Stefan Neumann, Univ. Duisburg-Essen (Germany)
Wolfgang Brockerhoff, Univ. Duisburg-Essen (Germany)
Franz-Josef Tegude, Univ. Duisburg-Essen (Germany)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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