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Proceedings Paper

1/f noise in deep submicron CMOS technology for RF and analogue applications
Author(s): Mercha Abdelkarim; Eddy Simoen; Stefaan Decoutere; Cor Claeys
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Paper Abstract

As further enhanced functionalities of mobile equipment are predicted, the development of a CMOS technology that provides low-power, high-speed, and low-noise performance has become an urgent and hot issue. For these application driven technologies the complexity must be tackled at different levels to insure the optimisation of the area, the power consumption, the speed and the reliability. Therefore this paper present a review of the solutions implemented at different levels from system down to technology in order to reduce the contribution of the low frequency noise. These achievements are illustrated by experimental results from literature and are inserted in the general context of system design strategies for reducing the 1/f noise contribution. In a first part dedicated to high-level system and circuit design, we introduce the noise reduction by switching techniques and the methodology for including the noise dispersion in scaled devices for the early design of analogue/RF circuits. In the second part, the 1/f noise is tackled at its origins i.e. the choice of the gate oxide and other critical process steps.

Paper Details

Date Published: 25 May 2004
PDF: 15 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546962
Show Author Affiliations
Mercha Abdelkarim, IMEC (Belgium)
Eddy Simoen, IMEC (Belgium)
Stefaan Decoutere, IMEC (Belgium)
Cor Claeys, IMEC (Belgium)

Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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