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Proceedings Paper

Nonlocal transport and thermal noise of the nanoscale MOSFET
Author(s): Young June Park; Seonghoon Jin; Sung-min Hong; Hong Shick Min
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Paper Abstract

We study the thermal noise characteristics of the scaled MOSFET devices using the hydrodynamic transport model and the Green's function technique. We compare the result of the hydrodynamic model with that of the drift-diffusion model and study the effect of the nonlocal transport on the drain noise current for the NMOSFET with the Lmet (determined by the metallurgical junctions) about 40 nm. It is found that the nonlocal transport effect broadens the effective vector Green's function and increases the responses of the electrostatic potential and the electric field at the entrance of the channel, which can directly influence the drain noise current. We also study the effect of the spatially nonuniform energy relaxation time on the noise characteristics and find that the region with larger energy relaxation time is less sensitive to the velocity fluctuation noise.

Paper Details

Date Published: 25 May 2004
PDF: 10 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546941
Show Author Affiliations
Young June Park, Seoul National Univ. (South Korea)
Seonghoon Jin, Seoul National Univ. (South Korea)
Sung-min Hong, Seoul National Univ. (South Korea)
Hong Shick Min, Seoul National Univ. (South Korea)

Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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