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Proceedings Paper

Microwave noise in III-V and SiGe based HBTs, comparison, trends, numbers
Author(s): Paulius Sakalas; Michael Schroter
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Paper Abstract

Bias dependent microwave noise characteristics of high-speed 150 GHz SiGe HBTs as well as AlGaAs and InGaP HBTs were measured in the 2-26 GHz frequency range. The characteristics are compared with the compact bipolar transistor models HICUM and VBIC. For noise source analysis and decomposition, a detailed small-signal model with corresponding parameters is employed which is based on a compact model. In particular, the influence of the various noise sources and mechanisms on the minimum noise figure is investigated. As predicted by Van der Ziel, correlation between base and collector current shot noise in SiGe and AIIIBV HBTs is found to reduce NFmin for the frequency range of investigation. AIIIBV HBTs exhibit strong reduction of collector shot noise due to the conduction band peculiarity, what is not the case for SiGe based HBTs.

Paper Details

Date Published: 25 May 2004
PDF: 13 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546899
Show Author Affiliations
Paulius Sakalas, Technische Univ. Dresden (Germany)
Semiconductor Physics Institute (Lithuania)
Michael Schroter, Technische Univ. Dresden (Germany)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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