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Proceedings Paper

Variation of the probability density function of resistance fluctuations across the metal insulator transition in Si:P
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Paper Abstract

We have investigated the resistance fluctuations in Si:P as a function of doping level n, across the Metal-Insulator transition at low temperatures. The fluctuation size increases sharply with decrease in the doping level, and shows indications of correlations (presented elsewhere in this conference). The measured jumps in voltage in a current biased sample due to resistance fluctuations were stored digitally and the fluctuation size statistics were estimated in the form of a Probabilty Density Function (PDF). On the metallic side, the PDF's were found to have more or less a Gaussian shape, as expected from an ensemble of small uncorrelated fluctuators. However, we find marked deviation of the PDF from a Gaussian behavior as the system crosses into the insulating side. The deviation starts to occur at the tail of the distribution, and grows in size with decreasing doping levels. The deviating part of the tail could be fitted with a log-normal expression. On the insulating side, this growth of a log-normal tail is also seen to occur as the temperature is lowered. The observations have been analysed using existing theories.

Paper Details

Date Published: 25 May 2004
PDF: 8 pages
Proc. SPIE 5469, Fluctuations and Noise in Materials, (25 May 2004); doi: 10.1117/12.546887
Show Author Affiliations
Swastik Kar, Univ. Karlsruhe (Germany)
Arup Kumar Raychaudhuri, Indian Institute of Science (India)


Published in SPIE Proceedings Vol. 5469:
Fluctuations and Noise in Materials
Dragana Popovic; Michael B. Weissman; Zoltan A. Racz, Editor(s)

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