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Proceedings Paper

1/f noise in GaN/AlGaN heterostructure field effect transistors under condition of strong geometric magnetoresistance
Author(s): Sergey L. Rumyantsev; Michael Shur; Wojciech Knap; Nina Dyakonova; Fabien Pascal; Alain Hoffman; Y. Ghuel; C. Gaquiere; D. Theron
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Paper Abstract

The I-V characteristics of GaN/AlGaN HFET and 1/f noise at 4K have been measured in strong magnetic fields, where the electron mobility is affected by geometric magnetoresistance. The magnetic field dependence of the 1/f noise shows that the number of electrons fluctuations is the dominant mechanism of the 1/f noise and precludes the mobility fluctuations mechanism. The channel mobility extracted from the magnetoresistance data first increases with gate bias reaching the maximum value of ~(0.9-1.0) m2/Vs at the 2D electron concentration of 5x1012 cm-2. This maximum value is close to the estimated ballistic mobility limit of 1.2 m2/Vs determined by the electron transit time with the Fermi velocity.

Paper Details

Date Published: 25 May 2004
PDF: 9 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546748
Show Author Affiliations
Sergey L. Rumyantsev, Rensselaer Polytechnic Institute (United States)
Michael Shur, Rensselaer Polytechnic Institute (United States)
Wojciech Knap, Univ. Montpellier II (France)
Nina Dyakonova, Univ. Montpellier II (France)
Fabien Pascal, Ctr. d'Electronique et de Micro-optoélectronique de Montpellier (France)
Alain Hoffman, Ctr. d'Electronique et de Micro-optoélectronique de Montpellier (France)
Y. Ghuel, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
C. Gaquiere, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
D. Theron, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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