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Proceedings Paper

High-density hybrid interconnect technologies
Author(s): Joachim John; Lars Zimmermann; Piet De Moor; Koen De Munck; Tom Borgers; Chris Van Hoof
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Paper Abstract

The ultra-high density hybrid flip chip integration of an array of detectors and its dedicated readout electronics can be achieved with a variety of solder bump techniques such as pure Indium of Tin alloys, (In, Ni/PbSn), but also conducting polymers, etc. Particularly for cooled applications or ultra-high density applications, Indium solder bump technology (electroplated or evaporated) is the method of choice. The state-of-the-art of solder bump technologies that are to a high degree independent of the underlying detector material will be presented and examples of interconnect densities between 5e4/cm2 and 1e6/cm2 will be demonstrated. For several classes of detectors, flip-chip integration is not allowed since the detectors have to be illuminated from the top. This applies to image sensors for EUV applications such as GaN/AlGaN based detectors and to MEMS-based detectors. In such cases, the only viable interconnection method has to be through the (thinned) detector wafer followed by a based-based integration. The approaches for dense and ultra-dense through-the-wafer interconnect "vias" will be presented.

Paper Details

Date Published: 8 September 2004
PDF: 8 pages
Proc. SPIE 5454, Micro-Optics: Fabrication, Packaging, and Integration, (8 September 2004); doi: 10.1117/12.546738
Show Author Affiliations
Joachim John, IMEC (Belgium)
Lars Zimmermann, IMEC (Belgium)
Piet De Moor, IMEC (Belgium)
Koen De Munck, IMEC (Belgium)
Tom Borgers, IMEC (Belgium)
Chris Van Hoof, IMEC (Belgium)


Published in SPIE Proceedings Vol. 5454:
Micro-Optics: Fabrication, Packaging, and Integration
Peter Van Daele; Juergen Mohr, Editor(s)

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