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Proceedings Paper

Study of laser die release by Q-switched Nd:YAG laser pulses
Author(s): Natallia S. Karlitskaya; Dirk Frits de Lange; Rene Sanders; Johan Meijer
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Paper Abstract

A new laser-assisted process called "Laser Die Transfer" is developed for high speed assembling of miniature electronic components. Silicon dies, fabricated on an optically transparent carrier are released using a laser pulse. This process has the potential to offer major advantages compared to existing transfer processes for future needs: high manufacturing speeds, contact-free, ability to handle very small and thin components. In this paper we present a thermal model, which describes the nonlinear behavior of silicon and carrier material under the influence of 1064 nm laser irradiation. The threshold intensities for die release and silicon damage will be explored as a function of operating laser beam characteristics. Experimental verification is presented to compare the simulated predictions and experimental results for the die release process.

Paper Details

Date Published: 20 September 2004
PDF: 9 pages
Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); doi: 10.1117/12.546674
Show Author Affiliations
Natallia S. Karlitskaya, Univ. Twente (Netherlands)
Dirk Frits de Lange, Univ. Twente (Netherlands)
Rene Sanders, Philips Ctr. for Industrial Technology (Netherlands)
Johan Meijer, Univ. Twente (Netherlands)


Published in SPIE Proceedings Vol. 5448:
High-Power Laser Ablation V
Claude R. Phipps, Editor(s)

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