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Proceedings Paper

Simulation of cyclostationary noise in semiconductor devices
Author(s): Simona Donati Guerrieri; Fabrizio Bonani; Giovanni Ghione
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Paper Abstract

The paper reviews the physics-based approach to the frequency conversion and noise analysis of semiconductor devices operating in forced large-signal (quasi) periodic regime. Noise analysis under large-signal operation is presented as a direct extension of the classical physics-based noise simulation technique where the modulated microscopic noise sources are propagated to the external device terminals through Green's functions. A complete discussion of a simple yet significant case study is presented with reference to a junction diode, which allows for an analytical cyclostationary noise model. To complete the paper, we include an analysis of the validity of two widely exploited approximated system-oriented cyclostationary noise modelling approaches, based on the modulation of small-signal stationary noise spectra.

Paper Details

Date Published: 25 May 2004
PDF: 15 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546667
Show Author Affiliations
Simona Donati Guerrieri, Politecnico di Torino (Italy)
Fabrizio Bonani, Politecnico di Torino (Italy)
Giovanni Ghione, Politecnico di Torino (Italy)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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