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Proceedings Paper

Current noise in semiconductor nanoscale devices
Author(s): Tanroku Miyoshi; Hideaki Tsuchiya; Matsuto Ogawa; Akihiko Asanuma; Toshitaka Okauchi
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Paper Abstract

We discuss the current noise characteristics of nano-scale devices by employing the quantum transport models based upon the nonequilibrium Green's function model (NEGF) and the Monte Carlo (MC) device simulation. In this paper the NEGF is used to study the shot noise suppression caused by the quantum mechanical correlations of electrons in semiconductor nano-scale devices, so that the current noise is discussed at low temperature. On the other hand, the quantum corrected MC model is developed to simulate practical semiconductor devices at normal temperatures, and the current noise spectral density of a nano-scale Si-MOSFET structure is presented.

Paper Details

Date Published: 25 May 2004
PDF: 9 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546659
Show Author Affiliations
Tanroku Miyoshi, Kobe Univ. (Japan)
Hideaki Tsuchiya, Kobe Univ. (Japan)
Matsuto Ogawa, Kobe Univ. (Japan)
Akihiko Asanuma, Kobe Univ. (Japan)
Toshitaka Okauchi, Kobe Univ. (Japan)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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