Share Email Print
cover

Proceedings Paper

Ge/Si self-assembled islands integrated in 2D photonic crystals microcavities for realisation of silicon-based light-emitting devices
Author(s): Sylvain David; Moustapha El Kurdi; Philippe Boucaud; Cecile Kammerer; Xiang Li; Sebastien Sauvage; Vinh Le Thanh; Isabelle Sagnes; Daniel Bouchier; Jean-Michel Lourtioz
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Silicon is the basic material for the microelectronics industry. The predicted limits for electrical interconnects in electronic circuits favor the development of alternative solutions such as optical interconnects to transfer information. The silicon-based components are an alternative to realise these interconnections, providing that high speed and high efficiency integrated optoelectronic devices can be realized. In this work, we have fabricated two-dimensional photonic crystal (PC) microcavities on silicon-on-insulator (SOI). The samples contain self-assembled Ge/Si islands deposited in the upper silicon layer by chemical vapor deposition. The silicon layer thickness measures 0.3 mm. The photonic crystals consist of triangular lattices of air holes etched in the upper silicon layer of the SOI substrate. The period lattice measures 0.5 μm and the drilled holes had diameters between 0.3 and 0.45 μm. These structures exhibit a forbidden band around 1.3 - 1.5 μm in TE polarisation. Different photonic crystal hexagonal microcavities were processed and the optical properties are probed at room temperature with the Ge/Si island photoluminescence. Quality factors larger than 200 are measured for hexagonal microcavities. On the one hand, the presence of the PC improves the vertical extraction of light, and on the other hand, we show that a significant enhancement of the Ge/Si island photoluminescence (x 100) can be achieved in the 1.3 - 1.55 μm spectral region using the microcavities. These attractive results should allow to realise efficient light emitting-diodes in the near infrared.

Paper Details

Date Published: 15 September 2004
PDF: 7 pages
Proc. SPIE 5450, Photonic Crystal Materials and Nanostructures, (15 September 2004); doi: 10.1117/12.546572
Show Author Affiliations
Sylvain David, CEA Grenoble (France)
Moustapha El Kurdi, Lab. de Photonique et de Nanostructures, CNRS (France)
Philippe Boucaud, Institut d'Electronique Fondamentale, CNRS and Univ. Paris-Sud (France)
Cecile Kammerer, Institut d'Electronique Fondamentale, CNRS and Univ. Paris-Sud (France)
Xiang Li, Institut d'Electronique Fondamentale, CNRS and Univ. Paris-Sud (France)
Sebastien Sauvage, Institut d'Electronique Fondamentale, CNRS and Univ. Paris-Sud (France)
Vinh Le Thanh, CRMC2, CNRS (France)
Isabelle Sagnes, Lab. de Photonique et de Nanostructures, CNRS (France)
Daniel Bouchier, Institut d'Electronique Fondamentale, CNRS and Univ. Paris-Sud (France)
Jean-Michel Lourtioz, Institut d'Electronique Fondamentale, CNRS and Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 5450:
Photonic Crystal Materials and Nanostructures
Richard M. De La Rue; Pierre Viktorovitch; Clivia M. Sotomayor Torres; Michele Midrio, Editor(s)

© SPIE. Terms of Use
Back to Top