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Proceedings Paper

Resistance noise scaling in a dilute two-dimensional hole system in GaAs
Author(s): Renaud Leturcq; Gerard Deville; Denis L'Hote; Roland Tourbot; Christopher J Mellor; Mohamed Henini
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Paper Abstract

The 1/f resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well has been measured on both sides of the 2D metal-insulator transition (MIT) at zero magnetic field (B = 0), and deep in the insulating regime. The two measurement methods used are described: I or V fixed, and measurement of resp. Vor I fluctuations. The normalized noise magnitude SR/R2 increases strongly when the hole density is decreased, and its temperature (T) dependence goes from a slight increase with T at the largest densities, to a strong decrease at low density. We find that the noise magnitude scales with the resistance, SR/R2 ~ R2.4. Such a scaling is expected for a second order phase transition or a percolation transition. The possible presence of such a transition is investigated by studying the dependence of the conductivity as a function of the density. This dependence is consistent with a critical behavior close to a critical density p* lower than the usual MIT critical density pc.

Paper Details

Date Published: 25 May 2004
PDF: 13 pages
Proc. SPIE 5469, Fluctuations and Noise in Materials, (25 May 2004); doi: 10.1117/12.546505
Show Author Affiliations
Renaud Leturcq, CEA Saclay (France)
CEA Saclay (France)
Gerard Deville, CEA Saclay (France)
Denis L'Hote, CEA Saclay (France)
Roland Tourbot, CEA Saclay (France)
Christopher J Mellor, Univ. of Nottingham (United Kingdom)
Mohamed Henini, Univ. of Nottingham (United Kingdom)

Published in SPIE Proceedings Vol. 5469:
Fluctuations and Noise in Materials
Dragana Popovic; Michael B. Weissman; Zoltan A. Racz, Editor(s)

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