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Proceedings Paper

On-wafer noise sources characterization
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Paper Abstract

In this work we present a method to characterize broadband noise circuit-models of on-wafer microwave noise sources. The models are used to estimate the device noise temperature, and therefore to characterize its Excess Noise Ratio (ENR). Two types of devices are considered: a cold-FET (Vds=0V) with the gate reverse-biased, and an unmatched avalanche noise diode. As a first step, a noise analysis is performed from noisy networks theory to derive an expression for the device output noise-current spectral density as a function of the intrinsic noise sources. Then, using the device measured reflection coefficient (or S-parameters in the case of a cold-FET) and measured noise temperatures, a regression technique is applied for the best frequency-fit between the measured and estimated 'multiplier' factor M (for which a smooth frequency dependence is assumed) associated to the intrinsic noise sources, thus reducing the measurement uncertainty. The resulting estimation of the device ENR features a sensible reduction in the measured 'ripple', without loss of the inherent 'slow' frequency variations due to variations of the device output impedance. As an application, the characterized devices are used as on-wafer noise sources to fully calibrate noise measurement systems.

Paper Details

Date Published: 25 May 2004
PDF: 12 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546375
Show Author Affiliations
Carmen Maya, Univ. Politècnica de Catalunya (Spain)
Antonio Lázaro, Univ. Politècnica de Catalunya (Spain)
Lluis Pradell, Univ. Politècnica de Catalunya (Spain)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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