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Proceedings Paper

Numerical simulations for the analysis of the dynamical behavior of an ultrafast InP/InGaAsP optoelectronic modulator
Author(s): Francesco M. De Paola; Vincenzo d'Alessandro; Andrea Irace; Jan Hendrik den Besten; Meint K. Smit
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Paper Abstract

In this paper we present a simulation strategy for the accurate prediction of the functionality of an InP based optoelectronic modulator. The device is composed of an InP/InGaAsP p-i-n diode embedded in a rib waveguide and a Mach-Zehnder interferometer. Finite Element Analysis for both semiconductor and optical equations solution is exploited. The presented numerical results, indicating a reverse bias voltage of 5.5 V for a 180° phase shift in a 2 mm-long device, are confirmed by measured data. Transient simulation predicts that this structure is suitable for 40 Gbit/s operation.

Paper Details

Date Published: 18 August 2004
PDF: 6 pages
Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.546364
Show Author Affiliations
Francesco M. De Paola, Univ. degli Studi di Napoli Federico II (Italy)
Vincenzo d'Alessandro, Univ. degli Studi di Napoli Federico II (Italy)
Andrea Irace, Univ. degli Studi di Napoli Federico II (Italy)
Jan Hendrik den Besten, Technische Univ. Eindhoven (Netherlands)
Meint K. Smit, Technische Univ. Eindhoven (Netherlands)

Published in SPIE Proceedings Vol. 5451:
Integrated Optics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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