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Proceedings Paper

Long-wavelength GaInAs/GaAs VCSELs and multiwavelength arrays
Author(s): Fumio Koyama; Masakazu Arai
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Paper Abstract

We have developed highly strained GaInAs/GaAs quantum well (QW) vertical cavity surface emitting lasers (VCSELs) emitting at 1.1 - 1.2 μm wavelength band. Excellent temperature characteritsics, enabling uncooled operations, have been realized. We successfully extended the emission wavelength of highly strained GaInAs QWs up to 1.2 mm without degradations of crystal qualities. We demonstrated uncooled low threshold current operations and high speed operations up to 10 Gb/s. We realized error-free data transmission in a standard single-mode fiber using a GaInAs single-mode VCSEL. For further upgrade of high speed LANs, we carried out the growth of highly strained GaInAs/GaAs quantum wells on a patterned substrate for realizing multiple wavelength VCSEL arrays in a wide wavelength span. We demonstrated a single-mode multiple-wavelength VCSEL array on a patterned GaAs substrate covering a new wavelength window of 1.1 - 1.2 μm. By optimizing a pattern shape, we achieved multiple-wavelength operation with widely and precisely controlled lasing wavelengths. The maximum lasing span is as large as 190 nm. The multiple-wavelength array and wavelength engineering of VCSELs may open up future ultra-high capacity short reach systems.

Paper Details

Date Published: 25 March 2004
PDF: 9 pages
Proc. SPIE 5277, Photonics: Design, Technology, and Packaging, (25 March 2004); doi: 10.1117/12.546343
Show Author Affiliations
Fumio Koyama, Tokyo Institute of Technology (Japan)
Masakazu Arai, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 5277:
Photonics: Design, Technology, and Packaging
Chennupati Jagadish; Kent D. Choquette; Benjamin J. Eggleton; Brett D. Nener; Keith A. Nugent, Editor(s)

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