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Proceedings Paper

Low frequency noise in 4H-SiC BJTs
Author(s): Sergey L. Rumyantsev; Michael E Levinshtein; Anant K. Agarwal; John W. Palmour
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Paper Abstract

Low frequency noise in 4H-SiC BJTs with the current gain β ≈ 10-15 and unity current gain frequency fT of about 1.5 GHz has been investigated. The corner frequency fc was found to be fc = 2×104 Hz. The value of the coefficient KB, which is the figure of merit for the low frequency noise in the region of noise proportional to squared current, was found to be 6×10-7 μm2. This value is only an order of magnitude higher than the typical values for high-frequency Si-BJTs.

Paper Details

Date Published: 25 May 2004
PDF: 4 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546075
Show Author Affiliations
Sergey L. Rumyantsev, Rensselaer Polytechnic Institute (United States)
Michael E Levinshtein, A.F. Ioffe Physico-Technical Institute (Russia)
Anant K. Agarwal, Cree, Inc. (United States)
John W. Palmour, Cree, Inc. (United States)

Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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