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Proceedings Paper

1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers with a detuned second-order grating
Author(s): Taha Masood; Steve Patterson; Nuditha V. Amarasinghe; Scott McWilliams; Duy Phan; Darren Lee; Gary A. Evans; Jerome K. Butler
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Paper Abstract

Single-frequency grating outcoupled surface emitting (GSE) semiconductor lasers emitting at 1310 nm with output powers exceeding 5.25 mW into a multi-mode fiber, threshold currents below 13 mA and with > 30 dB side-mode suppression ratios are reported. These lasers consist of a 400 μm long horizontal cavity, and a 15 μm long second-order outcoupler grating sandwiched between 200 μm long first-order distributed Bragg reflector (DBRs) gratings. Higher output powers can be achieved with longer outcoupler gratings. These GSE lasers operate at 3.125 Gbps and have a full-width at half-maximum (FWHM) beam divergence of 5 x 12 degrees.

Paper Details

Date Published: 1 September 2004
PDF: 8 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545943
Show Author Affiliations
Taha Masood, Photodigm, Inc. (United States)
Steve Patterson, Photodigm, Inc. (United States)
Nuditha V. Amarasinghe, Photodigm, Inc. (United States)
Scott McWilliams, Photodigm, Inc. (United States)
Duy Phan, Photodigm, Inc. (United States)
Darren Lee, Photodigm, Inc. (United States)
Gary A. Evans, Photodigm, Inc. (United States)
Southern Methodist Univ. (United States)
Jerome K. Butler, Southern Methodist Univ. (United States)


Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

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