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Proceedings Paper

Measurements of energy distribution functions of xenon ions from laser-produced plasmas for lithography
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Paper Abstract

The collector mirror lifetime of a future extreme ultraviolet lithography light source system is an important development issue. Beside vacuum cleanliness and heat load, fast ions are especially critical in case of laser-produced plasmas causing quick degradation of the multilayer structure of near normal incidence collector mirrors. We are currently developing a light source system based on a laser-produced plasma for next generation lithography. The plasma target is a liquid xenon jet. Energy distributions of fast xenon ions from the laser-produced plasma have been measured by time-of-flight (TOF) experiments. Two low repetition rate Nd:YAG lasers at 1064 nm with pulse lengths of 8 ns and 150 ps have been used for plasma generation and mean ion energies of 3 keV and 7 keV have been measured, respectively. In addition, the effects of fast ions on Mo/Si multilayer mirrors have been studied using a Xe ion gun. Ion sputtering of the multilayer structure is the main damage mechanism but boundary layer mixing and increased surface roughness are also observed.

Paper Details

Date Published: 20 September 2004
PDF: 9 pages
Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); doi: 10.1117/12.545933
Show Author Affiliations
Georg Soumagne, Extreme Ultraviolet Lithography System Development Association (Japan)
Tamotsu Abe, Extreme Ultraviolet Lithography System Development Association (Japan)
Hiroshi Komori, Extreme Ultraviolet Lithography System Development Association (Japan)
Hiroshi Someya, Extreme Ultraviolet Lithography System Development Association (Japan)
Takashi Suganuma, Extreme Ultraviolet Lithography System Development Association (Japan)
Akira Endo, Extreme Ultraviolet Lithography System Development Association (Japan)


Published in SPIE Proceedings Vol. 5448:
High-Power Laser Ablation V
Claude R. Phipps, Editor(s)

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