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Proceedings Paper

Semiconductor colliding-pulse mode-locked lasers at 60 GHz subjected to optical feedback
Author(s): Marco Passerini; Marc Sorel; Peter J. R. Laybourn; Guido Giuliani; Silvano Donati
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Paper Abstract

Semiconductor mode-locked lasers and colliding-pulse mode-locked lasers have proven to be effective sources of pulsed optical signals with repetition rate of several tens of GHz and above. Examples of application can be found in OTDM systems, radio-over-fiber networks, and millimeter-wave generation. This work reports on the characterisation of monolithic colliding-pulse passive mode-locked (CPM) lasers at 60 GHz in GaAs/AlGaAs double quantum well material, subjected to optical feedback. The characteristics of the optical-to-electrical converted signals are investigated both by means of an external fast commercial photodiode and by using the saturable absorber section of the device as an intra-cavity photodetector. The power of the electrical RF signal, linewidth, and central frequency stability are measured in unperturbed condition and under the effect of optical feedback. Measurements demonstrate the deterioration of the electrical properties of the signal as the optical feedback level is increased. The reduction of the stability region for mode-locking operation is also reported.

Paper Details

Date Published: 1 September 2004
PDF: 6 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545777
Show Author Affiliations
Marco Passerini, Univ. degli Studi di Pavia (Italy)
Marc Sorel, Univ. of Glasgow (United Kingdom)
Peter J. R. Laybourn, Univ. of Glasgow (United Kingdom)
Guido Giuliani, Univ. degli Studi di Pavia (Italy)
Silvano Donati, Univ. degli Studi di Pavia (Italy)


Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

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