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Proceedings Paper

Mode locking of InGaAs quantum dot lasers
Author(s): Mark G. Thompson; Kay Ti Tan; Claudio Marinelli; Kevin A. Williams; Roman L. Sellin; Richard V. Penty; Ian H. White; Matthias Kuntz; Dongxun Ouyang; Ilia N. Kaiander; Nikolai N. Ledentsov; Dieter Bimberg; Victor M. Ustinov; Alexey E. Zhukov; Alexey R. Kovsh; Franz Visinka; Stephan Jochum; Stephan Hansmann; Dae-Joon Kang; Mark G. Blamire
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Paper Abstract

Extensive mode-locking investigations are performed in InGaAs/InAs/GaAs quantum dot (QD) lasers. Monolithic mode-locked lasers are fabricated using QD material systems grown by MOCVD and MBE techniques and emitting at 1.1μm and 1.3μm, respectively. The mode-locking performance is evaluated using a variety of laser designs, with various ridge waveguide geometries, cavity and absorber lengths. Passive and hybrid mode-locking are studied and compared in 3.9mm long devices emitting at 1.1μm and operating at a repetition rate of 10GHz. Using 2.1mm long devices emitting at 1.3μm, 18GHz passive mode locking with 10ps Fourier transform limited pulses is demonstrated. This confirms the potential of quantum dot laser for low chirp, short optical pulse generation. Preliminary investigation of the timing jitter of QD passively mode-locked lasers and the behaviour of the QD absorber are also presented. Finally, we report 36GHz passive mode-locking with 6ps optical pulse obtained using 1.1mm long QD lasers emitting at 1.3μm.

Paper Details

Date Published: 1 September 2004
PDF: 13 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545749
Show Author Affiliations
Mark G. Thompson, Univ. of Cambridge (United Kingdom)
Kay Ti Tan, Univ. of Cambridge (United Kingdom)
Claudio Marinelli, Univ. of Cambridge (United Kingdom)
Kevin A. Williams, Univ. of Cambridge (United Kingdom)
Roman L. Sellin, Univ. of Cambridge (United Kingdom)
Richard V. Penty, Univ. of Cambridge (United Kingdom)
Ian H. White, Univ. of Cambridge (United Kingdom)
Matthias Kuntz, Technische Univ. Berlin (Germany)
Dongxun Ouyang, Technische Univ. Berlin (Germany)
Ilia N. Kaiander, Technische Univ. Berlin (Germany)
Nikolai N. Ledentsov, Technische Univ. Berlin (Germany)
Dieter Bimberg, Technische Univ. Berlin (Germany)
Victor M. Ustinov, A. F. Ioffe Physico-Technical Institute (Russia)
Alexey E. Zhukov, A. F. Ioffe Physico-Technical Institute (Russia)
Alexey R. Kovsh, NSC-Nanosemiconductor GmbH (Germany)
Franz Visinka, Opto Speed Deutschland GmbH (Germany)
Stephan Jochum, Opto Speed Deutschland GmbH (Germany)
Stephan Hansmann, Opto Speed Deutschland GmbH (Germany)
Dae-Joon Kang, Interdisciplinary Research Ctr. in Nanotechnology (United Kingdom)
Mark G. Blamire, Interdisciplinary Research Ctr. in Nanotechnology (United Kingdom)

Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

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