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Proceedings Paper

Photoluminescence and waveguiding in sputtered films of Er-doped chalcogenide glasses
Author(s): Adam Fuchs; Jochen Fick; Viorel Balan; Caroline Vigreux; Annie Pradel
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Paper Abstract

The spectral properties of Er3+-doped As2S3 and Ge33As12Se55 chalcogenide glasses are presented and discussed. Bulk samples and thin films have been studied. Bulk samples have been obtained by melt-quenching. Thin films have been obtained by RF sputtering. Sputtering targets have been fabricated from home-made cut and polished doped bulk samples and from commercial undoped targets with erbium pieces on the surface. The film morphology has been analysed by AFM and a column-like structure has been observed for the Ge33As12Se55 films. The presence of Er3+ ions in As2S3 and Ge33As12Se55 films has been confirmed by PL emission at 1.55 µm. A PL lifetime of 4 ms has been measured in Er-doped As2S3 films. Single mode waveguides have been fabricated by wet etching in Ge33As12Se55 films.

Paper Details

Date Published: 18 August 2004
PDF: 10 pages
Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.545740
Show Author Affiliations
Adam Fuchs, Institut de Microelectronique, Electromagnetisme et Photonique. CNRS (France)
Institut National Polytechnique de Grenoble (France)
Univ. Joseph Fourier and Lab. Sols/CNRS (France)
Jochen Fick, Institut de Microelectronique, Electromagnetisme et Photonique, CNRS (France)
Institut National Polytechnique de Grenoble (France)
Univ. Joseph Fourier and Lab. Sols/CNRS (France)
Viorel Balan, Lab. de Physicochimie de la Matiere Condensee/CNRS (France)
Univ. Montpellier II (France)
Caroline Vigreux, Lab. de Physicochimie de la Matiere Condensee/CNRS (France)
Univ. Montpellier II (France)
Annie Pradel, Lab. de Physicochimie de la Matiere Condensee/CNRS (France)
Univ. Montpellier II (France)


Published in SPIE Proceedings Vol. 5451:
Integrated Optics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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