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Proceedings Paper

Lateral mode selection in self-organizing extended-cavity broad-area laser
Author(s): Vincent Reboud; Nicolas Dubreuil; Gilles Pauliat; Gerald Roosen
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Paper Abstract

Many industrial applications require high power semiconductor laser sources emitting beams of good quality. However, the emission of a free running high-power broad-area semiconductor laser contains many lateral modes that explains its poor beam quality and low brightness. One of the techniques to improve beam quality consists in placing a broad-area laser diode, used as a pure optical amplifier, in an extended cavity. Such a technique has proved its efficiency to produce a nearly diffraction limited beam at least for low pumping current level. For higher pumping currents, its spatial quality is deteriorated by the oscillation of higher order extended cavity modes. Using numerical simulations, we demonstrate that the insertion of a photorefractive crystal inside a broad-area laser diode extended cavity should extend the laser operating single mode range.

Paper Details

Date Published: 1 September 2004
PDF: 6 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545685
Show Author Affiliations
Vincent Reboud, Univ. Paris-Sud (France)
Lab. Charles Fabry de l'Institut d'Optique, CNRS (France)
Nicolas Dubreuil, Univ. Paris-Sud (France)
Lab. Charles Fabry de l'Institut d'Optique, CNRS (France)
Gilles Pauliat, Univ. Paris-Sud (France)
Lab. Charles Fabry de l'Institut d'Optique, CNRS (France)
Gerald Roosen, Univ. Paris-Sud (France)
Lab. Charles Fabry de l'Institut d'Optique, CNRS (France)


Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

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