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Proceedings Paper

Nonlocal effects and transfer fields for electronic noise in small devices
Author(s): Luca Varani; Jean Claude Vaissiere; Pavel Shiktorov; Evjeni Starikov; Viktor Gruzhinskis; Tomas Gonzalez; Javier Mateos; Daniel Pardo; Lino Reggiani
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Paper Abstract

This paper overviews and implements the transfer-field method applied to the calculation of electronic noise in small semiconductor structures. Two basic schemes are used and developed in detail. The former considers velocity fluctuations and the latter acceleration fluctuations as microcopic noise sources. We show that the latter scheme has several advantages with respect to the former one. Indeed, starting from Markovian noise sources, the latter scheme separates the time and spatial evolution of the local noise sources. In this way, the dual representation of the noise spectral density in terms of impedance and admittance fields is recovered. A remarkable achievement is that from the knowledge of the bulk Langevin sources at a hydrodynamic level it is possible to calculate the noise spectra of non-homogeneous structures even for nanometric devices. The method is validated by comparing the results of the present scheme with those obtained from self-consistent Monte Carlo approaches for different structures of interest.

Paper Details

Date Published: 25 May 2004
PDF: 15 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.545597
Show Author Affiliations
Luca Varani, Univ. Montpellier II (France)
Jean Claude Vaissiere, Univ. Montpellier II (France)
Pavel Shiktorov, Semiconductor Physics Institute (Lithuania)
Evjeni Starikov, Semiconductor Physics Institute (Lithuania)
Viktor Gruzhinskis, Semiconductor Physics Institute (Lithuania)
Tomas Gonzalez, Univ. de Salamanca (Spain)
Javier Mateos, Univ. de Salamanca (Spain)
Daniel Pardo, Univ. de Salamanca (Spain)
Lino Reggiani, Univ. degli Studi di Lecce (Italy)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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