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Proceedings Paper

Modeling of microstrip lines on micromachined silicon substrates
Author(s): Alina N. Cismaru; Romolo Marcelli; George Sajin; Florea Craciunoiu
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Paper Abstract

In this paper, two matched microstrip line configurations for the excitation of magnetostatic wave resonators have been studied for optimizing the performances of a Magnetostatic Wave (MSW) Straight Edge Resonator (SER). The first transducer was designed for a band-stop and the second one for a band-pass resonator, both suspended on a silicon micromachined membrane obtained by means of wet anisotropic etching. It has been previously observed that the insertion losses of microstrip lines on silicon membrane for band-stop and band-pass MSW SERs are improved with respect to the same microstrip line structures realized on a silicon bulk substrate. For that reason the modelling of the microstrip lines has been optimized in view of their application in SER devices. The Microwave Office program, a powerful tool for the design of microwave planar devices, has been used. The theoretical S-parameters have been obtained and optimized by changing the geometry in the design of the transmission lines.

Paper Details

Date Published: 16 August 2004
PDF: 6 pages
Proc. SPIE 5455, MEMS, MOEMS, and Micromachining, (16 August 2004); doi: 10.1117/12.545541
Show Author Affiliations
Alina N. Cismaru, National Institute for Research and Development in Microtechnologies (Romania)
Romolo Marcelli, M2T-Microwave Microsystems Technology, CNR (Italy)
George Sajin, National Institute for Research and Development in Microtechnologies (Romania)
Florea Craciunoiu, National Institute for Research and Development in Microtechnologies (Romania)

Published in SPIE Proceedings Vol. 5455:
MEMS, MOEMS, and Micromachining
Hakan Urey; Ayman El-Fatatry, Editor(s)

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