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Proceedings Paper

Advanced Hg1-xCdxTe detectors based on MBE-grown multi-layer structures for IR spectroscopy and synergy with IR-fiber optics
Author(s): Galina Chekanova; Mikhail S. Nikitin; Viacheslav Artyushenko; Marina Musina; Albina Drugova; Viacheslav Kholodnov; Sergey Dvoretski; Yuri Sidorov
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Paper Abstract

High performance large active area photoconductors based on MBE-grown multi-layer structures consist of homogeneous narrow-gap n-Hg1-xCdxTe absorbing layer (n-absorber) blocked by thin adjacent graded-gap Hg1-xCdxTe layers have been fabricated and examined. Large active area (from 0.25 mm x 0.25 mm to 2.25 mm x 2.25 mm) Hg1-xCdxTe photoconductors with improved responsivity in Mid-Wave 3.0-5.5 μm (MWIR); Long-Wave 8-14 μm (LWIR) and Very Long-Wave 14-20 μm (VLWIR) infrared spectral ranges are very attractive for use in state-of-the art IR imaging, analytical and spectroscopic equipment. Synergy of advanced Hg1-xCdxTe detectors with IR-fiber optics, especially based on polycrystalline infrared (PIR-) fiber (4-18 μm) cables and bundles, provides above mentioned equipment with qualitatively new possibility like as remote probing of the objects which are difficult to access or beyond direct optical access. Availability of innovative Hg1-xCdxTe epitaxial material (half-finished products of photoconductors - three-layer sensitive structures grown by MBE in single run) open perspective to manufacture and offer improved detectors for much number of applications. Low temperature MBE growth technique provides better tuning of detectors' spectral responsivity curves to the ordered spectral ranges. Measurements performed on fabricated photoconductors showed significantly increased value of peak responsivity and high level of detectivity.

Paper Details

Date Published: 1 September 2004
PDF: 12 pages
Proc. SPIE 5459, Optical Sensing, (1 September 2004); doi: 10.1117/12.545485
Show Author Affiliations
Galina Chekanova, Federal State Unitary Enterprise ALPHA (Russia)
Mikhail S. Nikitin, Federal State Unitary Enterprise ALPHA (Russia)
Viacheslav Artyushenko, A.R.T. Photonics GmbH (Germany)
Marina Musina, General Physics Institute (Russia)
Albina Drugova, Insitute of Radio Engineering and Electronics (Russia)
Viacheslav Kholodnov, Institute of Radio Engineering and Electronics (Russia)
Sergey Dvoretski, Institute of Semiconductor Physics (Russia)
Yuri Sidorov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5459:
Optical Sensing
Brian Culshaw; Anna Grazia Mignani; Rainer Riesenberg, Editor(s)

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