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Proceedings Paper

Mode structure of quantum dot semiconductor lasers
Author(s): Yann Tanguy; Jan Muszalski; John Houlihan; Guillaume Huyet; Emma J. Pearce; Peter M Smowton; Mark Hopkinson
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Paper Abstract

An analysis of the transverse and longitudinal mode structure of broad area quantum dot lasers emitting at 1060 nm is presented. In particular, temperature is shown to play an important role in the stabilisation of the transverse mode structure of the devices. In addition, the investigation of the interaction between these transverse modes, through the measurement of the spatial intensity correlation, shows that the laser retains some modal properties in the unstable regime. Finally, measurements of spectral correlations between longitudinal mode groups display a strong dependency on their respective transverse mode structures indicating the importance of spatial overlap.

Paper Details

Date Published: 1 September 2004
PDF: 8 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545473
Show Author Affiliations
Yann Tanguy, Univ. College Cork (Ireland)
Jan Muszalski, Institute of Electron Technology (Poland)
John Houlihan, Univ. College Cork (Ireland)
Guillaume Huyet, Univ. College Cork (Ireland)
Emma J. Pearce, Cardiff Univ. (United Kingdom)
Peter M Smowton, Cardiff Univ. (United Kingdom)
Mark Hopkinson, Univ. of Sheffield (United Kingdom)

Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

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