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Proceedings Paper

Dynamics of laterally coupled semiconductor lasers: transition to chaos
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Paper Abstract

A method for the investigation of the dynamics of two semiconductor lasers, grown side-by-side on the same wafer to enhance the lateral optical coupling, is presented. Using steady state analysis, parameter regimes of relevant dynamics are identified. This is completed by a spectral analysis, were two routes to chaos are implicated. Finally, we confirm the calculations by showing an avoided crossing type of behavior for the coupling strength.

Paper Details

Date Published: 1 September 2004
PDF: 9 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545434
Show Author Affiliations
Mirvais Yousefi, Vrije Univ. Brussel (Belgium)
Vrije Univ. Amsterdam (Belgium)
Alberto Barsella, Univ. Gent (Belgium)
Daan Lenstra, Vrije Univ. Amsterdam (Netherlands)
Technische Univ. Eindhoven (Netherlands)


Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

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