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Proceedings Paper

Memory operation of an InGaAs/InP waveguide modulator with two coupled quantum wells in self-electro-optic effect device configuration
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Paper Abstract

We realized an InGaAs/InP pin-diode photodiode in monomode waveguide configuration. Measuring the photocurrent spectra as a function of the applied reverse bias voltage under illumination of the pin-diode with TE polarized light (1510-1580 nm), we observe one dominant peak, whose position shifts linearly with increasing wavelength towards higher reverse bias voltages. By comparing the peak position with the energies, calculated for the different interband transitions in the InGaAs quantum well and taking into account the polarization dependence, we assign this peak to the optical transition between the heavy-hole energy level and the second electron energy level in the quantum well. By operating the pin-diode in an resistor biased Self-Electrooptic Effect Device configuration we clearly observe bistability at a wavelength of 1550nm. The possible operation of this device as smart waveguide photoreceiver with flip-flop functionality is demonstrated.

Paper Details

Date Published: 18 August 2004
PDF: 8 pages
Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.545417
Show Author Affiliations
Heinz-Christoph Neitzert, Univ. degli Studi di Salerno (Italy)


Published in SPIE Proceedings Vol. 5451:
Integrated Optics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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