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Proceedings Paper

A 3x2 waveguide switch based on SiGe for C-band operation
Author(s): Jing Hua Teng; S. J. Chua; L. Y. Miao; R. Yin; B. J Li; E. A. Fitzgerald; Christopher W. Leitz
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Paper Abstract

A waveguide switch structure with three input and two output ports is designed in SiGe/Si material for the operation around 1.55 μm in wavelength. Strained Si0.96Ge0.04 layer with a thickness of 2.5 μm is used as the waveguide core layer. Single mode ridge waveguide of 10 μm wide and 1µm deep is formed by plasma etching. The switching functiaa on is realized by total internal reflection. Two separate electrodes are used to control the refractive index change in the intersection region through carrier injection. The switch device can also work as splitter, modulator, or add-drop multiplexer, etc. around wavelength of 1.55 μm. An extinction ratio of about 20 dB is achieved for the modulation state from the two side input ports and about 10dB for the central input port.

Paper Details

Date Published: 18 August 2004
PDF: 8 pages
Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.545358
Show Author Affiliations
Jing Hua Teng, Institute of Materials Research and Engineering (Singapore)
S. J. Chua, Institute of Materials Research and Engineering (Singapore)
Singapore-MIT Alliance/National Univ. of Singapore (Singapore)
L. Y. Miao, Institute of Materials Research and Engineering (Singapore)
R. Yin, Institute of Materials Research and Engineering (Singapore)
B. J Li, Institute of Materials Research and Engineering (Singapore)
E. A. Fitzgerald, Massachusetts Institute of Technology (United States)
Christopher W. Leitz, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5451:
Integrated Optics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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