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Proceedings Paper

Broadband bismuth-oxide-based erbium-doped fiber lasers
Author(s): Hideyuki Sotobayashi; Juliet T. Gopinath; Erich P. Ippen
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Paper Abstract

A Bismuth Oxide-based Erbium-doped fiber (Bi-EDF) is a promising optical amplifier because it exhibits broad gain bandwidth and high gain in a very short device length. In this paper, broadband Bismuth Oxide-based Erbium-doped fiber lasers (Bi-EDFLs) are reviewed including a wavelength tunable L-band passively mode-locked Bi-EDFL and a C- and L-band continuously tunable single frequency Bi-EDFL.

Paper Details

Date Published: 1 September 2004
PDF: 9 pages
Proc. SPIE 5460, Solid State Lasers and Amplifiers, (1 September 2004); doi: 10.1117/12.545323
Show Author Affiliations
Hideyuki Sotobayashi, Massachusetts Institute of Technology (United States)
National Institute of Information and Communications Technology (Japan)
Juliet T. Gopinath, Massachusetts Institute of Technology (United States)
Erich P. Ippen, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 5460:
Solid State Lasers and Amplifiers
Alphan Sennaroglu; James G. Fujimoto; Clifford R. Pollock, Editor(s)

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