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Proceedings Paper

Compact triangulation distance sensor realized by wafer bending technique
Author(s): Minoru Sasaki; Satoshi Endou; Kazuhiro Hane
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Paper Abstract

The triangulation distance sensor is constructed using the originally proposed wafer bending technique. Since the bending process is final in the fabrication sequence, the planer photolighography can be combined. On the Si wafer, the elements are pre-aligned at the unfolded planer condition. The position sensitive detector (PSD), mirror, and alignment pit for the collimation ball lens are prepared. The realized sensor substrate is 1.4mm in depth. Taking the advantage of the batch fabrication, 2x2 sensor array is prepared. The dynamic range of 4mm with ± 1% noise is confirmed.

Paper Details

Date Published: 16 August 2004
PDF: 8 pages
Proc. SPIE 5455, MEMS, MOEMS, and Micromachining, (16 August 2004); doi: 10.1117/12.545267
Show Author Affiliations
Minoru Sasaki, Tohoku Univ. (Japan)
Satoshi Endou, Tohoku Univ. (Japan)
Kazuhiro Hane, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 5455:
MEMS, MOEMS, and Micromachining
Hakan Urey; Ayman El-Fatatry, Editor(s)

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