Share Email Print
cover

Proceedings Paper

Astigmatism and beam quality of high-brightness tapered diode lasers
Author(s): Marc T. Kelemen; Juergen Weber; Senta Kallenbach; Christian Pfahler; Michael Mikulla; Guenter Weimann
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Semiconductor lasers with high beam quality and high optical output power are very attractive for a variety of applications such as molecular spectroscopy, fiber optic communication and frequency conversion. In the used power regime, devices based on tapered gain sections are the most promising candidates to reach these demands. However, two disadvantages of the tapered laser concept are the reduced output power provoked by their additional resonator losses and the astigmatism of these diode lasers. In case of high brightness diode lasers it is important to discuss the methods needed for an advanced output power also from the point of view of beam quality. The knowledge about astigmatism is essential for designing micro-optics. For the experimental results low modal gain, single quantum well InGaAs/AlGaAs devices emitting at 980 nm were grown by molecular beam epitaxy. The influence of the thermal resistance and of the tapered section length on the output power as well as on the beam quality has been investigated. In addition the impact of these parameters on the astigmatism of tapered diode lasers has been analysed. The experimental results have been correlated with simulations of the current-power curves and BPM simulations of the nearfield behaviour.

Paper Details

Date Published: 1 September 2004
PDF: 11 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545221
Show Author Affiliations
Marc T. Kelemen, Fraunhofer Institut fur Angewandte Festkoerperphysik (Germany)
Juergen Weber, Fraunhofer Institut fur Angewandte Festkoerperphysik (Germany)
Senta Kallenbach, Fraunhofer Institut fur Angewandte Festkoerperphysik (Germany)
Christian Pfahler, Fraunhofer Institut fur Angewandte Festkoerperphysik (Germany)
Michael Mikulla, Fraunhofer Institut fur Angewandte Festkoerperphysik (Germany)
Guenter Weimann, Fraunhofer Institut fer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

© SPIE. Terms of Use
Back to Top