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Proceedings Paper

Simultaneous extraction of the small-signal equivalent circuit elements and noise parameters of HBTs
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Paper Abstract

A method for a reliable characterization of the small-signal equivalent circuit and the noise model of Heterojunction Bipolar Transistors (HBTs) is presented. It allows the device equivalent circuit elements (in T-topology) and its noise parameters (NPs) to be extracted simultaneously, using only the measurements of its S-parameters and its noise figure (measured for a well-matched impedance). The procedure is based on a simultaneous estimation of the device S-parameters and noise figure, by fitting to the corresponding measurements. The NPs estimated from the device model are compared to the NPs estimated from the measured noise figure, providing an additional term in the error function to be minimized that guarantees physical results. Thus, the error function is composed by three terms: the root-sum of squares (RSS) of the differences between measured and estimated S-parameters, noise figure and NPs, respectively. Experimental verification of the extraction of the equivalent circuit elements and NPs of an HBT, up to 8 GHz, are presented, and the NPs are compared to those measured with an independent (tuner-based) method.

Paper Details

Date Published: 25 May 2004
PDF: 11 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.545079
Show Author Affiliations
Carmen Maya, Univ. Politècnica de Catalunya (Spain)
Antonio Lázaro, Univ. Politècnica de Catalunya (Spain)
Lluis Pradell, Univ. Politècnica de Catalunya (Spain)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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