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Proceedings Paper

Low frequency noise cancellation in resistive FET mixers
Author(s): Georg Boeck; Michael Margraf
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Paper Abstract

A complete analysis of the low-frequency (LF-) noise is performed on resistive FET mixers, where LF-noise is created due to the self-mixing process of the local oscillator. First, a new scaleable noise model for field-effect transistors in ohmic channel bias regime (Uds ≈ 0V) has been developed, which uses fluctuating resistances, instead of noise voltage or noise current sources. Measurements on a hybrid, single-ended mixer prove a good accuracy of the proposed model and reveal a method to distinguish between the different noise sources. Almost complete cancellation of the low frequency noise can be achieved by proper operation.

Paper Details

Date Published: 25 May 2004
PDF: 9 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.544854
Show Author Affiliations
Georg Boeck, Technische Univ. Berlin (Germany)
Michael Margraf, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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