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Proceedings Paper

Integrated 1.3-µm InGaAlAs-InP laser-modulator with double-stack MQW layer structure
Author(s): Thomas Knodl; Christian Hanke; Brem Kumar Saravanan; Martin Peschke; Rupert Schreiner; Bernhard Stegmuller
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Paper Abstract

We present first experimental results of the successful transfer of our monolithic integrated double-stack multi quantum well laser-modulator approach from the traditional InGaAsP/InP to the more promising InGaAlAs/InP material system. In continuous wave operation at room temperature, the devices achieved threshold currents of <21 mA, fiber coupled optical power levels up to 570 μW and static extinction ratios in the range of 15 dB/V. The measured small-signal modulation bandwidth of about 10 GHz is capacitance limited due to a conservative device layout.

Paper Details

Date Published: 18 August 2004
PDF: 7 pages
Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); doi: 10.1117/12.544610
Show Author Affiliations
Thomas Knodl, Infineon Technologies AG (Germany)
Christian Hanke, Infineon Technologies AG (Germany)
Brem Kumar Saravanan, Infineon Technologies AG (Germany)
Martin Peschke, Infineon Technologies AG (Germany)
Univ. Ulm (Germany)
Rupert Schreiner, Infineon Technologies AG (Germany)
Bernhard Stegmuller, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 5451:
Integrated Optics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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