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Proceedings Paper

Positron annihilation and optical spectroscopy of silicon-related materials
Author(s): D. Pliszka; G. P. Karwasz; Jozef Heldt; R. S. Brusa
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Paper Abstract

Optical (VIS photoluminescence, photoluminescence decay, IR absorption) measurements on Czochralski-grown silicon, subjected to several thermal treatments are presented. These data are supplemented by positron annihiliation techniques (lifetime Doppler broadening). We report also some preliminary positron-annihilation data on these films of Si-related, low-ε materials.

Paper Details

Date Published: 17 November 2003
PDF: 4 pages
Proc. SPIE 5258, IV Workshop on Atomic and Molecular Physics, (17 November 2003); doi: 10.1117/12.544571
Show Author Affiliations
D. Pliszka, Pomeranian Pedagogical Academy (Poland)
G. P. Karwasz, Pomeranian Pedagogical Academy (Poland)
Jozef Heldt, Pomeranian Pedagogical Academy (Poland)
R. S. Brusa, INFM, Univ. degli Studi di Trento (Italy)

Published in SPIE Proceedings Vol. 5258:
IV Workshop on Atomic and Molecular Physics
Jozef Heldt, Editor(s)

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