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Proceedings Paper

High-frequency low-noise amplifiers and low-jitter oscillators in SiGe:C BiCMOS technology
Author(s): Wolfgang Winkler; Johannes Borngraeber; Bernd Heinemann; Frank Herzel; Rene Scholz
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Paper Abstract

This paper describes the design of noise-critical circuits for radio-frequency and high-speed digital applications in a SiGe:C BiCMOS technology. Starting with a figure of merit for the high-frequency noise behavior of bipolar transistors, challenges in the transistor design are formulated. It is shown that the addition of carbon to the base of a SiGe-HBT results in an excellent high-frequency noise behavior of the transistors. A first design of a differential three-stage low-noise amplifier for 60 GHz applications is presented having a gain of 18 dB at 50 GHz. Furthermore, a 60 GHz voltage-controlled oscillator is presented with a phase noise of -90 dBc/Hz at 1 MHz offset from the oscillation frequency. Using a first-order PLL model, we predict an rms jitter contribution to a 5 MHz-bandwidth PLL as low as 0.4 percent of the oscillation period. Possible applications include wireless and wired broadband communication as well as automotive radar.

Paper Details

Date Published: 25 May 2004
PDF: 8 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.544513
Show Author Affiliations
Wolfgang Winkler, Innovations for High Performance Microelectronics (Germany)
Johannes Borngraeber, Innovations for High Performance Microelectronics (Germany)
Bernd Heinemann, Innovations for High Performance Microelectronics (Germany)
Frank Herzel, Innovations for High Performance Microelectronics (Germany)
Rene Scholz, Innovations for High Performance Microelectronics (Germany)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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