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Proceedings Paper

Ultraviolet femtosecond and nanosecond laser ablation of silicon: ablation efficiency and laser-induced plasma expansion
Author(s): Xianzhong Joe Zeng; Xianglei Mao; Ralph Greif; Richard E. Russo
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Paper Abstract

Femtosecond laser ablation of silicon in air was studied and compared with nanosecond laser ablation at ultraviolet wavelength (266 nm). Laser ablation efficiency was studied by measuring crater depth as a function of pulse number. For the same number of laser pulses, the fs-ablated crater was about two times deeper than the ns-crater. The temperature and electron number density of the pulsed laser-induced plasma were determined from spectroscopic measurements. The electron number density and temperature of fs-pulse plasmas decreased faster than ns-pulse plasmas due to different energy deposition mechanisms. Images of the laser-induced plasma were obtained with femtosecond time-resolved laser shadowgraph imaging. Plasma expansion in both the perpendicular and the lateral directions to the laser beam were compared for femtosecond and nanosecond laser ablation.

Paper Details

Date Published: 20 September 2004
PDF: 9 pages
Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); doi: 10.1117/12.544401
Show Author Affiliations
Xianzhong Joe Zeng, Lawrence Berkeley National Lab. (United States)
University of California/Berkeley (United States)
Xianglei Mao, Lawrence Berkeley National Lab. (United States)
Ralph Greif, Univ. of California/Berkeley (United States)
Richard E. Russo, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 5448:
High-Power Laser Ablation V
Claude R. Phipps, Editor(s)

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