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Proceedings Paper

0.85-NA ArF scanner: advancing features and performances
Author(s): Atsushi Namba; Shigeyuki Uzawa; Kenichi Kotoku
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Paper Abstract

In response to the age of full-scale ArF implementation in commercial production lines, we developed an 80 nm generation exposure tool, the FPA-6000AS4. This system is equipped with a 0.85 NA projection optics and an illuminator which provides a wide variety of illumination modes required in actual processes, such as variable annular and optional quadrupole and dipole. To meet the increasingly severe CD requirements, the projection optics is designed to have extremely low aberration with schemes to prevent flares. For enhanced focus accuracy, increased number of focus sensor channels and higher optics magnification are provided, coupled with Z-axis interferometer which directly measures the height of the stage. A new focus correction capability is incorporated based on direct measurement of reticle surface shape. The 6000 platform features the reaction-less stage system which significantly improves MA and MSD, the important indices of the stage performance. The platform also achieves throughput 1.4 times as high as the previous systems. This paper discusses the FPA-6000AS4’s imaging performance, reaction-less stage capability, reticle focusing, overlay, and throughput, showing some data.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.544239
Show Author Affiliations
Atsushi Namba, Canon Inc. (Japan)
Shigeyuki Uzawa, Canon Inc. (Japan)
Kenichi Kotoku, Canon Inc. (Japan)


Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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