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Proceedings Paper

LF-band noise in MOSFET in low power operation
Author(s): Sumihisa Hashiguchi; Shunsuke Kawai; Makoto Ohki; Kaoru Someya
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Paper Abstract

Noise performance of a commercial MOSFET was evaluated for the amplifier application in LF-band. The level of 1/f noise referred to the gate was about -126 dbV/Hz at 1 Hz and was proportional to f-0.9. At 100 kHz noise was white and was equivalent to the thermal noise from 1 kΩ and 100 kΩ at the drain current of 100 μA and 1 μA, respectively. 2SK1771 is acceptable as the amplifying device connected to a tuning circuit whose resonant impedance is more than the values stated above.

Paper Details

Date Published: 25 May 2004
PDF: 8 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.544230
Show Author Affiliations
Sumihisa Hashiguchi, Univ. of Yamanashi (Japan)
Shunsuke Kawai, Univ. of Yamanashi (Japan)
Makoto Ohki, Univ. of Yamanashi (Japan)
Kaoru Someya, Casio Computer Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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