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Proceedings Paper

Gamma-X band mixing in GaAs/AlAs superlattice
Author(s): Guoyun Ru; Z. B. Chen; X. Yu; Fow-Sen Choa; Terrance Worchesky; F. Liu; C. Lu; Jacob B. Khurgin
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Paper Abstract

GaAs/AlAs superlattices (SLs) were grown by MOCVD. The temperature dependence of photoluminescence was measured. The type II-transition dominated PL spectrum was achieved by controlling the layers thickness of GaAs and AlAs at low temperature. Such SLs with long carrier lifetime is very attractive for low crosstalk semiconductor optical amplifier applications.

Paper Details

Date Published: 15 December 2003
PDF: 4 pages
Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); doi: 10.1117/12.544034
Show Author Affiliations
Guoyun Ru, Univ. of Maryland, Baltimore County (United States)
Z. B. Chen, Univ. of Maryland, Baltimore County (United States)
X. Yu, Univ. of Maryland, Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland, Baltimore County (United States)
Terrance Worchesky, Univ. of Maryland, Baltimore County (United States)
F. Liu, Univ. of Maryland, Baltimore County (United States)
C. Lu, Univ. of Maryland, Baltimore County (United States)
Jacob B. Khurgin, Johns Hopkins Univ. (United States)


Published in SPIE Proceedings Vol. 5260:
Applications of Photonic Technology 6
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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