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Proceedings Paper

Study of strain effect in MOCVD selective area growth
Author(s): Guoyun Ru; X. Yu; Z. B. Chen; Fow-Sen Choa
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Paper Abstract

Bulk InGaAs and InGaAsP and quantum well structure have been grown on different oxide pattern by MOCVD. We found that because of material composition variation caused by the oxide pattern compressive strain s built, so that the PL intensity is reduced. By introducing tensile strain to compensate for the compressive strain caused by the SAG effect, the PL intensity has been improved. Active and passive integrated devices can be fabricated without significantly suffering the material degradation by using this method.

Paper Details

Date Published: 15 December 2003
PDF: 4 pages
Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); doi: 10.1117/12.544028
Show Author Affiliations
Guoyun Ru, Univ. of Maryland, Baltimore County (United States)
X. Yu, Univ. of Maryland, Baltimore County (United States)
Z. B. Chen, Univ. of Maryland, Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland, Baltimore County (United States)

Published in SPIE Proceedings Vol. 5260:
Applications of Photonic Technology 6
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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